ghz technology inc. reserves the right to make changes without further notice. ghz recommends that before the product(s) described herein are written into specifications, or used in critical applications, that the performance characteristics be verified by contacting the factory. ghz technology inc. 3000 oakmead v illage drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 / 986-8120 VTV075 7.5 watts, 25 volts, class a vhf television - band iii general description case outline the vtv 075 is a common emitter transistor capable of providing 7.5 watts peak sync, class a, rf output power over the band 175 - 225 mhz. it is designed for high efficiency, high linereity, class a operation. gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. 55hv, style 2 absolute maximum ratings maximum power dissipation @ 25 c 53 watts o maximum voltage and current bvces collector to emitter voltage 45 volts bvceo collector to emitter voltage 25 volts bvebo emitter to base voltage 4.0 volts ic collector current 4.0 amps maximum temperatures storage temperature - 65 to + 150 c o operating junction temperature + 200 c o electrical characteristics @ 25 c o symbol characteristics test conditions min typ max units pout pin power input vcc = 25 volts watts pg h imd vswr power out - pk sync f = 175-225 mhz 7.5 10 watts 1 power gain ic = 1.2amps 10 11.2 db efficiency 33 % intermodulation distortion pref = 7.5 watts - 52 db load mismatch tolerance f = 225 mhz 5:1 bvceo bvces collector to base breakdown ic = 50 ma 45 volts bvebo h fe cob q jc collector to emitter breakdown ic = 25ma 28 volts emitter to base breakdown ie = 10 ma 4.0 volts current gain vce = 5 v, 500 ma 10 output capacitance vcb = 25 v, f = 1mhz 35 pf thermal resistance tc = 25 c, ir scan 3.0 3.3 c/w o o note 1: european three tone test method: vision carrier -8db, sound carrier -7db, sideband signal -16 db, 0 db corresponds to peak sync level. issue october 1997
vtv 075 august 1996
v bb r 1 l 3 c 10 c 11 c 12 c 13 l 4 c 1 .56" l 1 c 2 c 3 .30" .94" c 4 c 5 q 1 .83" .51" .34" c 6 c 7 c 8 l 2 .32" c 9 l 5 r 2 c 14 c 15 l 6 c 16 c 17 v cc vtv-075 rf test circuit (tunable 175-225 mhz) recommended bias: v ce =25 v, i c =1.2 a (dc bias not shown) vtv-075 c1, c9, c13, c14 ........ 470pf ceramic chip c2, c3, c8 ................... 5-70pf compressed mica c4 ................................. 75pf ceramic chip c5 ................................. 82pf ceramic chip c6 ................................. 2-20pf air tuned c7 ................................ 25-240pf compressed mica c10, c17 ..................... 50 mf electrolytic c11, c16 ..................... 1mf electolytic c12, c15 .................... 1000pf ceramic chip l1 ................... cu strap, 1.20" x .12" x .03" l2 ................... cu strap, 1.05" x .12" x .04" l3, l6 .............. 10 turns #22 wire on f627-8q1 l4 ................... 4.7 m h l5 ................... 7 turns #22 wire (.15" outer diameter) r1, r2 ..............15 ohm 1/2 watt carbon board material is 1/16" teflon glass, 2 oz. cu microstriplines are 50w nominal. august 1996
|
